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Product Detailed Parameters
- Description：MOSFET N-CH 600V 7.3A DPAK
- Series：HiPerFET™, Polar™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：620mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1135 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：89W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD620N60ZF is an N-Channel SuperFET II FRFET MOSFET manufactured by onsemi. It features a 600 V drain-source voltage rating and a typical on-resistance of 528 mΩ at VGS = 10 V, with a maximum of 620 mΩ. The device supports a continuous drain current of 7.3 A at TC = 25°C and delivers a peak pulsed current of 21.9 A. It utilizes a DPAK (TO-252-3) surface-mount package and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Super-junction charge balance technology for optimized low on-resistance and reduced gate charge
- Optimized body diode reverse recovery performance to enhance system reliability
- High avalanche energy capability verified through 100% avalanche testing
Applications
- LCD, LED, and PDP TV and monitor lighting power supplies
- Solar inverters and AC-DC power supply circuits
- Power factor correction (PFC), server/telecom power, and industrial power applications
Procurement Notes
Verify the exact ordering information on the official onsemi website, as Fairchild part numbers containing underscores may have been updated to dashes to align with ON Semiconductor’s system requirements. Confirm that the specific DPAK tape and reel packaging matches your automated assembly equipment specifications before finalizing procurement orders.
Selection Notes
Select this component for high-frequency switching applications requiring low conduction losses and fast switching speeds. Ensure adequate thermal management is provided, as the device dissipates up to 89 W at a case temperature of 25°C. Validate the gate drive voltage against the absolute maximum ratings to prevent damage to the gate oxide layer during operation.
Part Context
This device belongs to the SuperFET II family, which employs super-junction technology to minimize both conduction and switching losses. It is designed specifically for high-voltage switching power applications where efficiency and compact size are critical design constraints.
Replacement Considerations
Consult the official onsemi product selector or datasheet for verified equivalent parts. Do not substitute based solely on matching voltage and current ratings without confirming pinout compatibility and thermal resistance characteristics.
