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Product Detailed Parameters
- Description：MOSFET N-CH 600V 7A DPAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD7N60TM-WS is a single N-channel enhancement mode MOSFET from onsemi's SuperFET series, housed in a DPAK (TO-252) surface-mount package. It features a 600V drain-source breakdown voltage and a continuous drain current of 7A. The device exhibits a maximum on-resistance of 530 mΩ at Vgs=10V and a gate charge of 30 nC. It supports a maximum power dissipation of 83W and operates within a temperature range of -55°C to +150°C.
Feature Summary
- SuperFET technology for optimized switching performance
- Enhanced avalanche ruggedness
- Lead-free finish and halogen-free construction
Applications
- High-frequency power supplies
- DC-DC converters
- Motor control circuits
Procurement Notes
Verify the specific suffix '-WS' against official documentation to confirm any unique marking or packaging variations distinct from the standard FCD7N60TM. Ensure compliance with RoHS and REACH requirements by checking the manufacturer's latest declaration. Confirm that the DPAK thermal characteristics meet your system's heat dissipation needs.
Selection Notes
Select this component when a 600V rating is required with moderate current handling capabilities. The low gate charge facilitates efficient drive circuit design. Consider the thermal resistance of the DPAK package relative to your PCB layout constraints. Compare on-resistance values against alternative packages if higher current density is needed.
Part Context
This part belongs to the SuperFET family, designed for high-efficiency power conversion. It utilizes advanced trench gate technology to reduce conduction losses while maintaining robust switching characteristics. The DPAK package provides a balance between thermal performance and space efficiency for surface-mount applications.
Replacement Considerations
Check for direct equivalents within the same voltage and current class. Verify pinout compatibility and thermal resistance specifications before substitution.
