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Product Detailed Parameters
- Description：MOSFET N-CH 650V 75A TO247
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：23mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs：222 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：7160 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：595W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The onsemi FCH023N65S3-F155 is an N-channel enhancement mode MOSFET from the SUPERFET III series, utilizing charge balance technology. It features a 650 V drain-source voltage and a maximum continuous drain current of 75 A. The device offers a low on-resistance of 23 mΩ and a typical gate charge of 222 nC at specified conditions. Housed in a TO-247-3 package for through-hole mounting, it supports a power dissipation of up to 595 W and operates within a temperature range of -55°C to +150°C.
Feature Summary
- SUPERFET III architecture with charge balance technology for optimized high-voltage performance
- Low on-resistance and gate charge to minimize conduction and switching losses
- High dv/dt capability to mitigate electromagnetic interference issues
- 100% avalanche tested for enhanced reliability under stress
Applications
- Telecommunications and server power supplies
- Industrial power conversion systems
- Uninterruptible power supply (UPS) units
- Solar energy inverters
Procurement Notes
Verify the specific suffix F155 against the official datasheet to confirm packaging details and reel specifications. Ensure compatibility with existing thermal management designs due to the TO-247-3 form factor. Confirm RoHS compliance status for environmental regulations. Cross-reference pinout configurations to prevent installation errors during assembly.
Selection Notes
Select this component for applications requiring high efficiency and robust performance in high-voltage environments. The low gate charge facilitates easier driver design and reduces switching losses. Consider the thermal resistance characteristics when designing heat sinks. Evaluate the avalanche energy rating if the application involves inductive load switching.
Part Context
This part belongs to the SUPERFET III family, which employs advanced superjunction technology. The series is designed to provide superior trade-offs between on-resistance and gate charge compared to traditional planar MOSFETs. It represents a significant advancement in power semiconductor efficiency for medium to high-power applications.
Replacement Considerations
Direct substitutes include other SUPERFET III devices with similar electrical ratings, such as the FCH023N65S3L4. Verify that any replacement maintains the same package type and pin configuration to ensure mechanical compatibility without redesigning the PCB layout.
