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Product Detailed Parameters
- Description：MOSFET N-CH 650V 75A TO247-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：29mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs：201 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：6340 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：463W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The onsemi FCH029N65S3-F155 is an N-channel power MOSFET from the SUPERFET III series, utilizing charge balance technology for high-voltage superjunction performance. It features a drain-source voltage (V_DSS) of 650 V at T_J = 25°C and 700 V at T_J = 150°C. The device offers a typical R_DS(on) of 23.7 mΩ and a typical gate charge (Q_g) of 201 nC. Continuous drain current (I_D) is rated at 75 A at T_C = 25°C and 50.8 A at T_C = 100°C. It is housed in a TO-247 package.
Feature Summary
- Employs charge balance technology to minimize conduction losses and provide excellent switching performance.
- Capable of withstanding extremely high dv/dt rates to assist in resolving EMI issues.
- Undergoes 100% avalanche testing to ensure reliability under harsh conditions.
Applications
- Telecommunications and server power supplies
- Industrial power systems
- Uninterruptible Power Supply (UPS) units
- Solar energy systems
Procurement Notes
Verify the specific suffix -F155 against the manufacturer datasheet to confirm packaging details. Ensure design parameters align with absolute maximum ratings, particularly regarding thermal management for continuous current handling. Confirm RoHS compliance status as required by project specifications before finalizing procurement.
Selection Notes
Select this component for designs requiring low conduction loss and fast switching capabilities in high-voltage environments. The low gate charge facilitates easier driver design, while the robust avalanche rating supports applications subject to transient stress. Evaluate thermal requirements based on the specified current derating curves for optimal efficiency.
Part Context
This part belongs to the SUPERFET III family, representing onsemi's advanced superjunction MOSFET technology. It is designed to replace older planar technologies in high-efficiency power conversion applications, offering superior figure-of-merit characteristics compared to standard MOSFETs in the same voltage class.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the SUPERFET III lineup. Verify pinout compatibility and electrical parameter margins when considering cross-references from other manufacturers.
