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Product Detailed Parameters
- Description：MOSFET N-CH 650V 65A TO247-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：40mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 6.5mA
- Gate Charge (Qg) (Max) @ Vgs：136 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：4740 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：417W (Tc)
- Operating Temperature：-55°C ~ 150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The onsemi FCH040N65S3-F155 is an N-channel enhancement-mode MOSFET belonging to the SUPERFET III family. It features a TO-247 package with through-hole mounting and three pins. Key electrical parameters include a maximum drain-source voltage (Vds) of 650 V, a continuous drain current (Id) of 76 A, and a maximum drain-source resistance (Rds) of 40 mΩ. The device operates within a temperature range of -55°C to +150°C, with a typical gate charge (Qg) of 226 nC at Vgs=10 V and a maximum power dissipation (Pd) of 595 W.
Feature Summary
- Utilizes SUPERFET III charge balance technology for low conduction loss and superior switching performance.
- Optimized body diode reverse recovery characteristics to improve system reliability.
- Capable of withstanding extreme dv/dt rates.
Applications
- High-efficiency power systems requiring miniaturization
- Industrial power supplies
- Telecommunications and server power
Procurement Notes
Verify the specific suffix '-F155' against official datasheets to confirm packaging or tape-and-reel specifications. Ensure the component meets required thermal management standards given the 595 W dissipation rating. Confirm RoHS compliance status for environmental regulations. Validate that the TO-247 through-hole form factor matches the target PCB design constraints.
Selection Notes
Select this component for applications demanding high voltage handling and low on-resistance. The 650 V rating suits high-voltage AC/DC conversion. Consider the 76 A current capacity for heavy-load scenarios. The SUPERFET III architecture offers advantages in EMI reduction due to controlled switching speeds. Evaluate thermal requirements carefully as the device generates significant heat under load.
Part Context
This part belongs to onsemi's SUPERFET III series, which employs advanced super-junction technology. The series is designed to minimize both conduction and switching losses. The FCH040N65S3 variant specifically targets high-power density applications where efficiency and thermal performance are critical. It represents a generation of MOSFETs optimized for modern power electronics demands.
Replacement Considerations
Direct substitutes may include other SUPERFET III variants with similar Rds(on) and voltage ratings, such as FCH029N65S3 or NVH040N65S3F. Verify pin compatibility and thermal characteristics before substitution. Cross-reference with onsemi's official replacement guides to ensure functional equivalence.
