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Product Detailed Parameters
- Description：MOSFET N-CH 600V 76A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：41mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：347 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：10900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：595W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH041N60F-F085 is an N-channel enhancement mode MOSFET from the SuperFET II series, manufactured by onsemi. It features a 600V drain-source voltage rating and a continuous drain current of 76A at case temperature of 25°C. The device utilizes superjunction technology to achieve a maximum on-resistance of 41mΩ at VGS=10V. Key electrical parameters include a gate charge of 347nC and an input bias capacitance of 10.9nF. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-247-3 through-hole package.
Feature Summary
- SuperFET II superjunction technology for low conduction and switching losses
- Optimized body diode reverse recovery characteristics
- Unclamped inductive switching (UIS) capability
Applications
- High-voltage full-bridge and half-bridge DC-DC converters
- Interleaved boost power factor correction (PFC)
- Automotive high-voltage systems including HEV/EV applications
Procurement Notes
Verify component authenticity against official datasheets due to potential obsolescence status. Confirm package integrity and pinout alignment with TO-247-3 specifications. Ensure storage conditions maintain moisture sensitivity levels prior to soldering. Validate that the specific suffix matches the required automotive or industrial grade documentation.
Selection Notes
Select this component for designs requiring robust avalanche energy handling and efficient soft-switching performance. The low gate charge supports high-frequency operation while minimizing driver requirements. Consider thermal management strategies given the power dissipation capabilities and ensure the driving circuitry accommodates the specified threshold voltage characteristics.
Part Context
This part belongs to the SuperFET II family of high-voltage MOSFETs designed for efficiency and reliability. It represents an evolution in superjunction technology, offering improved dv/dt rates and reduced parasitic effects compared to earlier generations. The TO-247-3 package facilitates effective heat transfer for high-current applications.
Replacement Considerations
Direct substitutes may include other SuperFET II variants with similar voltage and current ratings. Verify compatibility regarding gate charge, on-resistance, and package dimensions before integration.
