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Product Detailed Parameters
- Description：MOSFET N-CH 650V 76A TO247
- Series：FRFET®, SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：41mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：5V @ 7.6mA
- Gate Charge (Qg) (Max) @ Vgs：298 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12560 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：595W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
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Overview
The FCH041N65EFL4 is an N-Channel enhancement-mode MOSFET from onsemi's SuperFET II family, utilizing charge balance super-junction technology. It features a 650V drain-source voltage rating and a maximum continuous drain current of 76A at 25°C case temperature. The device exhibits a low on-resistance of 41mΩ typical at VGS=10V. Key electrical parameters include a gate charge of 229nC, a threshold voltage of 3V, and a power dissipation capacity of 595W. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-247-4 package.
Feature Summary
- SuperFET II charge balance technology for optimized switching performance
- Low on-resistance reducing conduction losses
- High avalanche energy capability for robust operation
- Optimized body diode reverse recovery characteristics
Applications
- High-voltage full-bridge and half-bridge DC-DC converters
- Interleaved boost Power Factor Correction (PFC) circuits
- Hybrid Electric Vehicle (HEV) and Electric Vehicle (EV) boost PFC applications
Procurement Notes
Verify the specific suffix EFL4 against official datasheets to confirm pinout and thermal pad configuration. Ensure compatibility with TO-247-4 mounting requirements. Check for AEC-Q101 automotive qualification status if deploying in automotive environments. Confirm RoHS compliance and lead-free status for regulatory adherence. Validate supplier authenticity through authorized distribution channels.
Selection Notes
Select this component for high-efficiency power conversion requiring low conduction and switching losses. The 650V rating suits medium-voltage industrial and automotive systems. Consider the 76A current capability and 595W power dissipation for thermal management design. The TO-247-4 package facilitates effective heat sinking. Evaluate gate charge requirements against driver capabilities for optimal switching speed.
Part Context
This part belongs to onsemi's SuperFET II series, representing advanced super-junction MOSFET technology. The family emphasizes charge balance for superior performance compared to conventional planar structures. It targets demanding applications in energy infrastructure, industrial automation, and electric mobility where efficiency and reliability are critical.
Replacement Considerations
Direct substitutes must match the 650V rating, 76A current, and TO-247-4 package. Verify equivalent Rds(on) and Qg values for circuit compatibility. Cross-reference with other SuperFET II variants or comparable super-junction devices from other manufacturers ensuring identical pinout and thermal characteristics.
