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Product Detailed Parameters
- Description：MOSFET N-CH 600V 75A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：43mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：215 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12225 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：592W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH043N60 is a single N-Channel Power MOSFET from onsemi's SUPERFET II family, utilizing high-voltage super-junction technology. It features a 600 V drain-source breakdown voltage and a continuous drain current of 75 A. The device exhibits a maximum on-resistance of 43 mΩ at 10 V gate drive. Key electrical characteristics include a typical gate charge of 163 nC and an effective output capacitance of 730 pF. It operates within a temperature range of -55°C to +150°C and is housed in a TO-247 package.
Feature Summary
- Employs super-junction technology for optimized performance
- Features low gate charge for efficient switching
- Includes 100% avalanche testing for reliability
Applications
- High-frequency power conversion circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) designs
Procurement Notes
Verify the specific ordering suffix and revision level against the official datasheet before procurement. Confirm RoHS compliance status and lead times with authorized distributors. Ensure thermal management requirements align with the specified power dissipation limits. Check for any recent lifecycle changes or obsolescence notices directly from the manufacturer.
Selection Notes
Select this component for applications requiring high voltage handling with moderate current capabilities. The super-junction architecture offers superior figure-of-merit compared to traditional planar MOSFETs. Consider the TO-247 package for through-hole mounting and robust heat sinking. Evaluate the trade-off between on-resistance and gate charge for specific switching frequency requirements.
Part Context
This part belongs to onsemi's SUPERFET II series, which integrates super-junction technology into standard packages. The series targets efficiency improvements in medium-power applications. The FCH043N60 specifically addresses needs for lower conduction losses while maintaining reliable switching performance in industrial environments.
Replacement Considerations
Direct substitutes must match the 600V rating, 75A current, and TO-247 package. Verify equivalent Rds(on) and Qg values to ensure circuit compatibility. Cross-reference pinouts and thermal characteristics carefully.
