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Product Detailed Parameters
- Description：MOSFET N-CH 800V 56A TO247
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 5.8mA
- Gate Charge (Qg) (Max) @ Vgs：350 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：14685 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：500W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH060N80-F155 is an N-channel Power MOSFET from onsemi's SUPERFET II series. It features a maximum drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 58 A at case temperature. The device exhibits a low on-state resistance (Rds(on)) of 60 mΩ at Vgs = 10 V. It is housed in a TO-247 through-hole package with a maximum power dissipation of 500 W. Key electrical parameters include a threshold voltage of 4.5 V, gate charge of 350 nC at 10 V, and an operating temperature range from -55°C to 175°C.
Feature Summary
- SUPERFET II technology for optimized switching performance
- Low on-state resistance for reduced conduction losses
- High voltage capability suitable for demanding power applications
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- DC-DC converters
Procurement Notes
Verify the specific suffix F155 against the manufacturer's latest datasheet to confirm pinout and thermal characteristics. Ensure the procurement channel provides original packaging to maintain component integrity. Cross-reference the part number with official onsemi databases to avoid counterfeit components. Confirm RoHS compliance status if required by your assembly process.
Selection Notes
Select this component when high voltage blocking capability above 600 V is required alongside moderate current handling. The 60 mΩ Rds(on) offers a balance between conduction loss and cost compared to lower resistance alternatives. Consider the TO-247 package for ease of heatsinking in through-hole designs where surface mount options are unsuitable.
Part Context
This part belongs to onsemi's SUPERFET II family, designed for high-efficiency power switching. The FCH series typically targets industrial and consumer power supplies. The FCH060N80 variant specifically addresses applications requiring robust 800 V ratings with improved switching speed over previous generations.
Replacement Considerations
Direct replacements must match the 800 V rating, 58 A current, and 60 mΩ resistance within the TO-247-3 package. Verify gate charge and thermal resistance specifications to ensure equivalent performance in existing circuit designs.
