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Product Detailed Parameters
- Description：MOSFET N-CH 650V 44A TO247
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：67mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 4.4mA
- Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3090 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：312W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH067N65S3-F155 is an N-channel enhancement mode MOSFET from the SuperFET III family, manufactured by onsemi. It features a 650 V drain-source voltage rating and a maximum continuous drain current of 44 A. The device incorporates a low on-resistance of 0.067 Ω and utilizes silicon technology. Packaged in a TO-247AB flange mount configuration with three terminals, it supports operation within a temperature range of -55 °C to +150 °C. Key electrical characteristics include a gate charge of 78 nC and a power dissipation capacity of 46 W.
Feature Summary
- Integrates SuperFET III technology for optimized switching performance
- Features built-in diode configuration for single-channel applications
- Designed for high-voltage power switching environments
Applications
- High-frequency power conversion circuits
- Industrial motor drive systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific suffix F155 against official datasheets to confirm packaging details. Ensure compatibility with thermal management requirements for the TO-247 package. Confirm that the 650V rating aligns with system voltage constraints. Check for RoHS compliance status in the latest documentation before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring robust high-voltage handling with moderate current capabilities. The TO-247 package facilitates effective heat dissipation for through-hole mounting. Consider the 0.067 Ω on-resistance for efficiency calculations in power loss scenarios. Evaluate the 44 A current limit against peak load demands to ensure reliable operation under stress conditions.
Part Context
This part belongs to the FCH series of SuperFET III devices, representing onsemi's advanced planar trench MOSFET technology. The series targets high-efficiency power applications where reduced switching losses are critical. The FCH067N65S3-F155 variant specifically offers a balance between voltage blocking capability and conduction losses suitable for general-purpose industrial power electronics.
Replacement Considerations
Direct substitutes may include other SuperFET III parts with similar Rds(on) and voltage ratings. Verify pinout compatibility for TO-247 packages when considering alternatives. Cross-reference thermal resistance values to ensure equivalent heat sinking requirements are met during replacement.
