ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 650V 54A TO247-3
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：77mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7162 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：481W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
Download product information
Overview
The FCH077N65F-F085 is an N-Channel SuperFET II FRFET MOSFET manufactured by Fairchild Semiconductor. It features a 650V drain-source voltage rating and utilizes charge balance technology to achieve low on-resistance and gate charge. The device is housed in a TO-263 (D2PAK) surface-mount package, designed for high-efficiency power conversion applications requiring robust switching performance.
Feature Summary
- SuperFET II architecture with charge balance technology
- Low on-resistance and gate charge characteristics
- Optimized body diode reverse recovery performance
- Suitable for hard and soft switching topologies
Applications
- High-voltage full-bridge and half-bridge DC-DC converters
- Interleaved boost PFC circuits
- HEV-EV automotive boost PFC systems
Procurement Notes
Verify the manufacturer designation as Fairchild Semiconductor or onsemi due to corporate acquisition history. Confirm the specific suffix matches the required package variant. Ensure compliance with RoHS standards and check for AEC-Q101 qualification if automotive grade is required. Validate datasheet revision against current production status.
Selection Notes
Select this component for applications demanding high efficiency in high-voltage environments. The SuperFET II technology offers advantages in switching speed and thermal management compared to standard MOSFETs. Consider the TO-263 package for surface-mount assembly requirements and verify thermal dissipation capabilities within the target system design constraints.
Part Context
This part belongs to the SuperFET II family, representing an evolution of Fairchild's FRFET technology. It integrates advanced trench gate and field plate structures to minimize losses. The series is widely recognized for improving power density in industrial and automotive power supplies through optimized silicon utilization.
Replacement Considerations
Check for direct equivalents within the FCH0xxN65F series from Fairchild or onsemi. Verify pinout compatibility and electrical parameter overlaps before substituting with other 650V SuperFET devices.
