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Product Detailed Parameters
- Description：MOSFET N-CH 650V 24A TO247-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：125mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 2.4mA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1940 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：181W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH125N65S3R0-F155 is an N-channel SuperFET III MOSFET from onsemi, designed for high-voltage power applications. It features a 650V drain-source voltage rating and utilizes charge balance technology to achieve low on-resistance and gate charge. The device is housed in a TO-247-3 package with a flange mount configuration, supporting continuous currents up to 44A at 25°C case temperature. Its optimized switching characteristics and high dv/dt capability make it suitable for demanding industrial and energy conversion systems.
Feature Summary
- SuperFET III architecture utilizing charge balance technology for superior performance
- Low on-resistance and gate charge to minimize conduction and switching losses
- High dv/dt capability for robust operation in fast-switching environments
- Flange mount TO-247-3 package for efficient thermal management
Applications
- Telecommunications and server power supplies
- Industrial power conversion systems
- Uninterruptible Power Supply (UPS) units
- Solar energy inverters
Procurement Notes
Verify the specific suffix -F155 against official datasheets to confirm packaging details and reel specifications. Ensure compatibility with existing thermal interface materials for the flange mount design. Cross-reference the part number with manufacturer documentation to validate current production status and environmental compliance certifications prior to procurement.
Selection Notes
Select this component for designs requiring high efficiency in 650V applications. Evaluate thermal resistance requirements based on the TO-247-3 flange mount package. Consider the low gate charge for driving circuit simplicity. Compare total loss calculations against alternative SuperFET III variants to ensure optimal system performance and cost-efficiency.
Part Context
This part belongs to the SuperFET III family of N-channel MOSFETs from onsemi. The series is characterized by advanced charge balance technology, offering improved reliability and efficiency over previous generations. It is engineered for high-power density applications where low switching losses and high voltage tolerance are critical.
Replacement Considerations
Compatible substitutes within the SuperFET III family include FCP125N65S3R0 and FCH067N65S3. Verify pinout compatibility and thermal characteristics when substituting. Ensure that the alternative part meets or exceeds the required voltage and current ratings for the specific application.
