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Product Detailed Parameters
- Description：MOSFET N-CH 600V 23A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：165mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2434 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：227W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The onsemi FCH165N60E is a SuperFET II N-channel enhancement mode MOSFET featuring 600V drain-source voltage and 23A continuous current at 25°C case temperature. It utilizes superjunction technology with a typical Rds(on) of 132mΩ and Qg of 57nC. The device includes an integrated body diode with 1.2V forward voltage. Rated for -55°C to +150°C junction temperatures, it offers low thermal resistance (RθJC max 0.55°C/W). Designed for EMI management, the 'E' suffix indicates optimized switching speeds.
Feature Summary
- SuperFET II superjunction architecture provides low conduction losses via reduced Rds(on) and low gate charge.
- Integrated body diode features fast recovery characteristics suitable for synchronous rectification applications.
- Optimized switching speed configuration manages electromagnetic interference through controlled rise and fall times.
- High avalanche energy capability ensures robust performance under transient overload conditions.
Applications
- High-frequency power supply designs requiring efficient switching
- Motor control systems utilizing synchronous rectification
- Industrial inverter circuits demanding high reliability
- DC-DC converter topologies needing low conduction loss
Procurement Notes
Verify the specific datasheet version corresponding to the FCH165N60E part number before integration. Confirm that the package type matches the intended PCB footprint and thermal management strategy. Ensure the gate drive voltage aligns with the specified Vgs limits to prevent device degradation. Check for any recent obsolescence notices or lifecycle changes from the manufacturer.
Selection Notes
Select this component when low Rds(on) and manageable switching losses are critical for system efficiency. The EMI-optimized switching profile makes it suitable for noise-sensitive environments. Compare total gate charge against driver capabilities to ensure adequate switching performance. Evaluate thermal requirements based on the specified junction-to-case resistance for heat sink design.
Part Context
This device belongs to the SuperFET II family, representing advanced superjunction MOSFET technology from onsemi. It succeeds earlier generations by offering improved figure-of-merit metrics. The series focuses on balancing conduction and switching losses for versatile power electronics applications.
Replacement Considerations
Direct substitutes within the same SuperFET II family may include variants with different current ratings but identical pinouts. Verify compatibility regarding Rds(on) and thermal characteristics when considering alternative part numbers from the manufacturer's portfolio.
