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Product Detailed Parameters
- Description：MOSFET N-CH 650V 19A TO247-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：165mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：154W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH165N65S3R0-F155 is a single N-channel power MOSFET from the onsemi SUPERFET III series, designed for high-voltage applications. It features a 650V drain-source breakdown voltage and a maximum continuous drain current of 44A. The device exhibits a low on-resistance of 165 milliohms at 25°C, contributing to reduced conduction losses. It operates within a temperature range of -55°C to +150°C and utilizes a TO-247-3 flange mount package.
Feature Summary
- Utilizes SUPERFET III charge balance technology for optimized performance
- Provides easy drive capability with low gate charge characteristics
- Features enhanced avalanche ruggedness for improved reliability
Applications
- Industrial motor drives
- High-frequency switching power supplies
- Uninterruptible power systems (UPS)
- Solar inverter circuits
Procurement Notes
Verify the specific suffix against official documentation to confirm packaging details. Confirm RoHS compliance status through the manufacturer datasheet. Ensure thermal management solutions align with the specified power dissipation limits. Validate pinout compatibility during integration into existing PCB layouts.
Selection Notes
Select this component when high voltage blocking and moderate current handling are required. The low on-resistance supports efficient power conversion in demanding environments. Consider the TO-247 package for robust heat dissipation needs. Evaluate gate drive requirements based on the specified threshold voltage and total gate charge parameters.
Part Context
This part belongs to the SUPERFET III family, which employs advanced superjunction technology. This architecture allows for lower specific on-resistance compared to conventional planar structures. The series targets efficiency improvements in medium-power switching applications across industrial and renewable energy sectors.
Replacement Considerations
Direct substitutes include FCP165N65S3R0L and FCPF165N65S3R0L. Verify package type differences between TO-247 and TO-220 variants before substitution.
