FCH47N60F

$6.26

Description：MOSFET N-CH 600V 47A TO247-3
Series：SuperFET™
Mfr：onsemi
Package：Tube

SKU:44ba7c072bc1 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 47A TO247-3
Series：SuperFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：73mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：270 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：8000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：417W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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FCH47N60F

Overview

The FCH47N60F is a 600V N-Channel MOSFET from the SuperFET family, utilizing an advanced charge balance mechanism. It features a typical RDS(on) of 0.062Ω at VGS=10V and ID=23.5A. The device supports a continuous drain current of 47A at TC=25°C and handles a pulsed current of 141A. Key dynamic parameters include a total gate charge (Qg) of 210nC and a reverse recovery time (trr) of 240ns. Power dissipation reaches 417W at TC=25°C with a junction temperature range of -55°C to +150°C.

Feature Summary

SuperFET technology provides low on-resistance and reduced gate charge for high efficiency.
Fast recovery body diode minimizes switching losses during reverse recovery events.
Robust avalanche capability ensures reliability under extreme dv/dt and inductive load conditions.

Applications

AC/DC power conversion systems
Switching mode power supplies
High-frequency DC-DC converters

Procurement Notes

Verify the manufacturer origin, as Fairchild Semiconductor was acquired by ON Semiconductor. Confirm RoHS compliance status and specific package marking against the datasheet revision B specifications. Ensure the TO-247 package dimensions match the required mechanical constraints for the target application.

Selection Notes

Select this component when low conduction loss and fast switching are critical for system miniaturization. The low effective output capacitance aids in reducing turn-off losses. Evaluate thermal management requirements carefully, as the device dissipates significant power at full load currents.

Part Context

This part belongs to the SuperFET family, designed for high-voltage applications requiring superior performance compared to standard MOSFETs. The technology focuses on minimizing both conduction and switching losses simultaneously, making it suitable for modern high-efficiency power electronics designs.