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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, 7
- Series：SupreMOS™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：36mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：285 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：12385 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：543W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
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Overview
The FCH76N60N is a N-Channel Power MOSFET from the SupreMOS family, manufactured by Fairchild Semiconductor. It features a 600V drain-source voltage rating and supports a continuous drain current of 76A at case temperature. The device utilizes advanced super-junction technology with a deep trench filling process to achieve a low on-resistance of 36mΩ. It is housed in a TO-247 through-hole package and offers a maximum power dissipation of 543W at case temperature.
Feature Summary
- Utilizes next-generation high voltage super-junction technology employing a deep trench filling process for superior performance.
Applications
- Switching mode AC/DC power conversion systems
Procurement Notes
Verify component authenticity and datasheet version when sourcing this part. Confirm that the specific revision matches your design requirements, as specifications may vary between manufacturing lots or updated documentation releases. Ensure proper handling procedures are followed during installation due to the high-power nature of the device.
Selection Notes
Select this component for applications requiring high efficiency and robust switching capabilities within the 600V voltage range. The low on-resistance contributes to reduced conduction losses, making it suitable for designs prioritizing thermal management and system miniaturization in power supply architectures.
Part Context
This component belongs to the SupreMOS series, which represents Fairchild's proprietary generation of high-voltage MOSFETs. The series is engineered to minimize conduction loss while providing superior switching performance and high avalanche energy withstand capability, tailored for modern power electronics demands.
Replacement Considerations
The FCA16N60_F109 is an alternative option within the same manufacturer portfolio, though it offers significantly lower current ratings (16A) and higher on-resistance (0.26 ohm). Verify compatibility carefully as these parameters differ substantially from the FCH76N60N.
