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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, 7
- Series：SupreMOS™
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：72.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：300 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：11045 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：543W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
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Overview
The FCH76N60NF is a 600V N-channel Power MOSFET from onsemi's SupreMOS FRFET series, manufactured using silicon technology. It features a TO-247-3 through-hole package with single-channel enhancement mode operation. Key electrical parameters include a continuous drain current of 72.8A, a maximum drain-source breakdown voltage of 600V, and a gate-source voltage rating of ±30V. The device exhibits a typical on-resistance of 28.7mΩ at 10V gate drive and a gate charge of 300nC. It supports a power dissipation of 543W and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Utilizes SupreMOS FRFET technology for optimized switching performance.
- Features high current capability with low conduction losses.
- Designed for robust thermal management in through-hole applications.
Applications
- High-frequency power conversion circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the manufacturer designation carefully, as this component is associated with onsemi following industry consolidation. Confirm the specific suffix 'NF' matches your bill of materials, as it may indicate specific tape-and-reel or tube packaging variations distinct from standard bulk versions. Check for obsolescence status, as older Fairchild-branded parts often transition to onsemi part numbers.
Selection Notes
Select this component when a 600V N-channel MOSFET with high current handling is required in a TO-247 package. Ensure the application can accommodate the 300nC gate charge for driver compatibility. Compare the 28.7mΩ on-resistance against system efficiency targets. Verify that the thermal design supports the 543W dissipation rating under actual operating conditions.
Part Context
This part belongs to the SupreMOS family, representing advanced planar trench MOSFET technology. Originally developed by Fairchild Semiconductor, the product line was integrated into onsemi's portfolio. The FCH76N60NF serves as a high-performance discrete power switch designed to replace older generation devices in demanding industrial and consumer power applications requiring high reliability.
Replacement Considerations
Check for direct equivalents such as the FCH47N60NF for lower current requirements. Verify pinout compatibility with TO-247-3 packages. Consider newer onsemi SupreMOS variants if improved switching speeds are needed. Ensure any substitute maintains the 600V voltage rating and similar thermal characteristics.
