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Product Detailed Parameters
- Description：MOSFET N-CH 600V 72.8A TO247-3
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：72.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：300 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：11045 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：543W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The onsemi FCH76N60NF is an N-channel enhancement mode MOSFET belonging to the SupreMOS FRFET series. It features a 600 V drain-source voltage rating and a continuous drain current of 72.8 A. The device exhibits a maximum on-resistance of 28.7 mΩ at 10 V gate drive. It operates within a temperature range of -55 °C to +150 °C, with a power dissipation capacity of 543 W. Key electrical characteristics include a gate threshold voltage of 3 V, a total gate charge of 300 nC, and a minimum forward transconductance of 92 S.
Feature Summary
- SupreMOS FRFET technology for optimized switching performance
- High avalanche energy capability for robust operation
- Low on-state resistance to minimize conduction losses
Applications
- Industrial motor drives
- Power supply circuits
- Inverter systems
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revisions match design requirements. Ensure thermal management solutions align with the specified power dissipation limits. Check for RoHS compliance status in final documentation before integration.
Selection Notes
Evaluate thermal resistance parameters against system heat sink capabilities. Compare gate charge values with driver output strength to ensure efficient switching. Assess operating voltage margins relative to the 600 V breakdown rating. Consider package mounting constraints for the TO-247-3 form factor.
Part Context
This component is part of onsemi's SupreMOS family, designed for high-efficiency power switching applications. The FRFET variant focuses on reducing reverse recovery charge for improved efficiency in hard-switching topologies. It serves as a discrete solution for medium-to-high power conversion tasks.
Replacement Considerations
Direct substitutes may include FCA76N60N or FCH76N60N, though pinout and specific electrical tolerances must be verified against the original datasheet specifications.
