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Product Detailed Parameters
- Description：MOSFET N-CH 600V 25A I2PAK
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：125mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3352 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：216W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262 (I2PAK)
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The onsemi FCI25N60N is an N-channel SupreMOS power MOSFET designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 25A at case temperature. The device exhibits a maximum on-resistance of 125mΩ, ensuring efficient conduction with low power loss. Packaged in a TO-262 (I2PAK) through-hole format, it offers robust thermal performance with a maximum power dissipation of 216W. The component operates within a junction temperature range of -55°C to +150°C and utilizes silicon technology.
Feature Summary
- High-voltage capability with 600V breakdown rating
- Low on-resistance for improved efficiency
- Robust thermal management via TO-262 package
Applications
- High-voltage DC-DC converters
- Motor control circuits
- Industrial power supplies
Procurement Notes
Verify the obsolete status before procurement as this part may be discontinued by the manufacturer. Confirm availability through authorized distributors or secondary markets. Ensure compatibility with existing PCB footprints for the TO-262 package. Check for updated replacement components if long-term supply stability is required for production.
Selection Notes
Select this component for designs requiring high voltage isolation and moderate current handling in through-hole assemblies. Consider the thermal resistance characteristics when designing heat sinking solutions. Evaluate the gate charge requirements against the driving circuit capabilities to ensure adequate switching speeds without excessive drive losses.
Part Context
This device belongs to the SupreMOS family from onsemi, known for optimized performance in power switching applications. The TO-262 package provides mechanical stability and effective heat dissipation compared to surface-mount alternatives. It serves as a discrete solution for medium-power industrial and consumer electronics systems.
Replacement Considerations
Check for direct pin-compatible replacements such as the FCP25N60N-F102 or FCH25N60N, verifying that electrical parameters like Rds(on) and Vgs(th) meet design specifications. Ensure the alternative package type fits the assembly constraints.
