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Product Detailed Parameters
- Description：MOSFET N-CH 600V 7A I2PAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262 (I2PAK)
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The FCI7N60 is a single N-channel enhancement mode MOSFET from the SuperFET series, manufactured by onsemi. It utilizes silicon technology and is housed in a TO-262-3 (I2PAK) through-hole package. Key electrical parameters include a drain-source breakdown voltage of 600 V and a continuous drain current of 7 A. The device features a maximum on-resistance of 600 mOhms and a gate charge of 30 nC. It operates within a temperature range of -55 C to +150 C with a power dissipation rating of 83 W.
Feature Summary
- Integrated SuperFET technology for optimized switching performance
- High voltage capability suitable for robust power applications
- Through-hole mounting for reliable mechanical connection
Applications
- General purpose power switching circuits
- DC-DC converter topologies
- Motor control systems
Procurement Notes
Verify the specific datasheet revision and ordering suffixes directly with onsemi or authorized distributors to ensure compatibility with your design requirements. Confirm RoHS and REACH compliance status as indicated in the official documentation before finalizing procurement decisions.
Selection Notes
Select this component when a high-voltage N-channel MOSFET with moderate current handling is required for through-hole designs. Consider the 600 V rating and 7 A current capacity against your circuit's peak load and thermal management constraints to ensure safe operation within the specified junction temperature limits.
Part Context
This part belongs to the SuperFET family of discrete semiconductors offered by onsemi. These devices are designed for general-purpose power switching applications, combining low on-resistance with fast switching characteristics. The FCI7N60 specifically targets applications requiring reliable performance in standard through-hole packaging formats.
Replacement Considerations
Check for direct pin-compatible alternatives within the same SuperFET series or other manufacturers offering equivalent 600V N-channel specifications in TO-262 packages. Ensure that critical parameters such as Rds(on), Qg, and avalanche energy ratings meet or exceed the original requirements.
