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Product Detailed Parameters
- Description：MOSFET N-CH 650V 44A TO220
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：67mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 4.4mA
- Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3090 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：312W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
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Overview
The FCP067N65S3 is an N-channel enhancement-mode MOSFET from onsemi's SuperFET III family, utilizing charge balance super-junction technology. It features a 650 V drain-source voltage rating and a maximum continuous drain current of 44 A at case temperature. The device exhibits a low on-resistance of 67 mΩ at 10 V gate drive. Packaged in a TO-220 through-hole housing with three pins, it supports a power dissipation of 312 W at case temperature and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- SuperFET III super-junction architecture for optimized high-voltage performance
- Low on-resistance enabling efficient power switching
- Robust thermal handling capabilities in standard through-hole packaging
Applications
- High-frequency power supplies
- Industrial motor drives
- Uninterruptible power systems
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Ensure the procurement channel provides genuine onsemi components with traceable lot codes. Confirm that the TO-220 package dimensions match the target PCB footprint requirements before finalizing orders.
Selection Notes
Select this component when a 650 V rating and 44 A current capacity are required in a through-hole format. The 67 mΩ on-resistance offers a balance between conduction losses and cost. Consider the 312 W thermal dissipation limit for heatsinking design. This part suits applications needing reliable high-voltage switching without surface-mount constraints.
Part Context
This device belongs to the FCPF series of single N-channel MOSFETs. It represents onsemi's implementation of charge balance technology for high-voltage applications. The SuperFET III branding indicates advanced super-junction construction designed to reduce switching losses compared to conventional planar technologies.
Replacement Considerations
Check for direct equivalents within the same SuperFET III family or other manufacturers offering identical 650 V / 67 mΩ specifications in TO-220 packages. Verify pin compatibility and thermal characteristics before substitution.
