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Product Detailed Parameters
- Description：MOSFET N-CH 600V 37A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：104mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4165 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP104N60 is an N-Channel SuperFET II MOSFET manufactured by onsemi, utilizing silicon technology in a TO-220-3 through-hole package. It features a drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 37 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 104 mΩ at Vgs = 10 V. Gate specifications include a threshold voltage (Vgs(th)) of 5 V and a gate charge (Qg) of 145 nC. Power dissipation reaches 357 W, with an operating temperature range from -55°C to +150°C junction temperature.
Feature Summary
- Employs SuperFET II charge balance technology for optimized high-voltage performance.
- Designed to minimize conduction losses while providing robust switching characteristics.
- Capable of withstanding extreme dv/dt ratings and high avalanche energy levels.
Applications
- AC-DC power conversion systems
- Communication and server power supplies
- Industrial power supply units
Procurement Notes
Verify the specific suffix against official documentation, as naming conventions may vary due to corporate integration history. Confirm RoHS compliance status directly from the manufacturer's declaration. Ensure the ordering part number matches the required package variant, as distribution listings may contain discrepancies regarding suffixes or packaging types. Cross-reference datasheet revisions for any parameter updates.
Selection Notes
Select this component for applications requiring high breakdown voltage combined with low on-resistance. The SuperFET II architecture offers improved efficiency compared to standard planar technologies. Consider the thermal management requirements associated with the TO-220-3 package and the specified power dissipation limits. Evaluate the gate charge parameters against driver capabilities to ensure optimal switching speeds.
Part Context
This device belongs to the SuperFET II family of high-voltage MOSFETs from onsemi. It represents a transition from legacy Fairchild Semiconductor product lines following the company's acquisition. The series utilizes superjunction technology to achieve superior figure-of-merit metrics, balancing voltage blocking capability with low resistive losses for efficient power processing.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs before considering alternative components from other manufacturers.
