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Product Detailed Parameters
- Description：MOSFET N-CH 600V 23A TO220
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：165mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2434 pF @ 380 V
- FET Feature：-
- Power Dissipation (Max)：227W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The onsemi FCP165N60E is an N-channel enhancement-mode MOSFET belonging to the SuperFET II series. It utilizes a high-voltage superjunction technology with charge balance for optimized performance. Key electrical parameters include a drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 23 A at 25°C case temperature. The device features a maximum on-resistance (Rds(on)) of 165 mΩ at Vgs=10V, with a typical value of 132 mΩ. Total gate charge (Qg) is typically 57 nC. Power dissipation reaches 227 W at 25°C case temperature. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- Superjunction architecture provides low on-resistance and low gate charge for efficient switching.
- Enhanced EMI management through controlled rise and fall times compared to standard SuperFET II devices.
- Robust avalanche capability verified by 100% avalanche testing for improved reliability.
Applications
- High-frequency power conversion circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the specific suffix 'E' indicates the EMI-optimized variant within the SuperFET II family. Confirm package type matches TO-220AB or similar through-hole configurations as per the official datasheet. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values under actual operating conditions.
Selection Notes
Select this component when low conduction losses and manageable electromagnetic interference are critical. The 'E' suffix denotes slower switching speeds suitable for noise-sensitive applications. Compare Rds(on) and Qg trade-offs against standard SuperFET II parts if faster switching is required instead.
Part Context
This part belongs to onsemi's SuperFET II portfolio, which employs superjunction technology for high-voltage applications. The FCP165N60E specifically targets designs requiring balanced performance between efficiency and EMI suppression, distinguishing it from higher-speed variants in the same series.
Replacement Considerations
Standard SuperFET II MOSFETs without the 'E' suffix offer faster switching but may generate more EMI. Verify pinout compatibility and thermal characteristics before substituting with other 600V N-channel TO-220 packages.
