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Product Detailed Parameters
- Description：MOSFET N-CH 650V 19A TO220-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：165mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：154W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP165N65S3 is an N-channel enhancement mode MOSFET from the SuperFET III series by onsemi. It features a 650V drain-source voltage rating and a TO-220F package for through-hole mounting. Key electrical parameters include a maximum continuous drain current of 19A, a typical on-resistance of 165 milliohms at 10V gate drive, and a gate charge of 35 nanocoulombs. The device operates within a temperature range of -55°C to +150°C junction temperature with a power dissipation capacity of 35W.
Feature Summary
- SuperFET III technology integrates logic-level gate drive with low on-resistance for improved efficiency.
- Optimized body diode characteristics support high-reliability switching applications.
- Enhanced thermal performance facilitates effective heat dissipation in compact designs.
Applications
- High-frequency power supply circuits
- Industrial motor control systems
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the exact suffix against official datasheets as variations exist. Confirm RoHS compliance status directly with the manufacturer. Check for obsolescence notices or lifecycle changes before finalizing procurement plans. Ensure packaging quantities match specific production requirements.
Selection Notes
Select this component when a balance of moderate current handling and low conduction loss is required in a standard through-hole package. Evaluate thermal management needs based on the 35W dissipation limit. Compare gate charge specifications against driver capabilities to ensure optimal switching speeds.
Part Context
This part belongs to the SuperFET III family, which combines advanced trench gate technology with optimized layout. It serves as a robust solution for general-purpose high-voltage switching where reliability and efficiency are critical design constraints.
Replacement Considerations
Direct substitutes may include FCPF165N65S3R0L or FCPF165N65S3L1-F154. Verify pinout compatibility and electrical parameter tolerances before substitution. Consult official cross-reference lists for validated alternatives.
