FCP165N65S3R0

$1.70

Description：FCP165N65S3R0 - POWER MOSFET, N-
Series：SuperFET® III
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:9b5aa21a35c7 Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：FCP165N65S3R0 - POWER MOSFET, N-
Series：SuperFET® III
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id：4.5V @ 440mA
Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：154W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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FCP165N65S3R0

Overview

The FCP165N65S3R0 is a single N-channel SuperFET III MOSFET manufactured by onsemi, not Fairchild Semiconductor. It utilizes silicon technology in a TO-220-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 650 V and a continuous drain current (Id) of 19 A. The device features a maximum on-resistance (Rds(on)) of 165 mΩ at 10 V gate drive. Gate-source voltage limits are ±30 V with a threshold voltage of 2.5 V. Total gate charge (Qg) is 39 nC. Power dissipation is rated at 154 W. Operating temperature ranges from -55 °C to +150 °C junction temperature.

Feature Summary

SuperFET III technology integrates the power MOSFET and body diode for optimized performance.
Single N-channel enhancement mode configuration for high-voltage switching applications.

Applications

High-frequency power supplies
Power factor correction circuits
DC-DC converters

Procurement Notes

Verify manufacturer identity as the component is produced by onsemi. Confirm obsolescence status prior to procurement as the lifecycle indicates end-of-life. Ensure design-in compatibility with existing thermal management solutions given the TO-220-3 package constraints. Validate that the 650V rating meets system voltage requirements.

Selection Notes

Select this component for applications requiring low conduction losses at 650V ratings. Compare Rds(on) and Qg values against alternative SuperFET generations for efficiency optimization. Consider the TO-220-3 package for through-hole assembly requirements. Evaluate thermal resistance characteristics for heat sink sizing in high-power density designs.

Part Context

This part belongs to the SuperFET III family, which combines trench MOSFET technology with an integrated fast recovery body diode. The series targets high-efficiency power conversion systems. The specific model denotes the 165 mΩ on-resistance variant within the 650V voltage class lineup.