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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20.2A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：199mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2950 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The onsemi FCP190N60-GF102 is an N-channel enhancement mode MOSFET belonging to the SuperFET II series. It features a 600 V drain-source voltage rating and a continuous drain current of 20.6 A. The device utilizes a TO-220 package for through-hole mounting. Key electrical parameters include a maximum on-resistance of 0.19 Ω, a typical gate charge of 63 nC at 10 V, and a power dissipation capacity of 208 W. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- SuperFET II technology integrates low gate charge with fast switching characteristics to minimize switching losses.
- Optimized body diode performance provides improved reverse recovery behavior for efficient hard-switching applications.
- Robust avalanche energy capability ensures reliability under inductive load switching conditions.
Applications
- High-frequency AC/DC and DC/DC converter topologies
- Uninterruptible Power Supply (UPS) systems
- Industrial motor control circuits
Procurement Notes
Verify the specific suffix GF102 against official datasheets to confirm pinout compatibility and marking variations. Ensure thermal management designs account for the specified 208 W power dissipation limit. Confirm RoHS compliance status via manufacturer documentation prior to integration into regulated assemblies.
Selection Notes
Select this component for high-voltage applications requiring low conduction losses and fast switching speeds. The TO-220 package suits designs needing robust thermal performance without complex surface-mount reflow processes. Evaluate gate drive requirements against the 63 nC charge specification to ensure adequate driver capability.
Part Context
This part belongs to onsemi's SuperFET II family, which combines trench gate and field plate technologies. These devices are engineered for high-efficiency power conversion, offering superior performance compared to standard planar MOSFETs in terms of switching speed and thermal stability.
Replacement Considerations
Direct substitutes may include other 600V N-channel MOSFETs with similar Rds(on) and Qg values from the same manufacturer or competitors. Verify pinout alignment and thermal resistance specifications before substitution.
