FCP190N60

Description：MOSFET N-CH 600V 20.2A TO220-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube,Tube

SKU:e8b8b3f5f3e7 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 20.2A TO220-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2950 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：208W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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FCP190N60

Overview

The onsemi FCP190N60E is an N-channel enhancement mode MOSFET from the SuperFET II series, housed in a TO-220 package. It features a drain-source voltage of 600 V and a continuous drain current of 20.6 A. The device has a maximum on-resistance of 0.19 Ω and a typical gate charge of 63 nC at 10 V. Power dissipation reaches 208 W, with an operating temperature range from -55°C to +150°C. Maximum gate-source voltage is ±30 V.

Feature Summary

SuperFET II technology integrates low RDS(on) with optimized gate charge for efficient switching.
Enhanced avalanche ruggedness supports high-energy switching applications.
Low thermal resistance facilitates effective heat dissipation in through-hole designs.

Applications

High-frequency power supplies
Uninterruptible power systems (UPS)
DC-to-AC converters

Procurement Notes

Verify the specific suffix against official datasheets, as variations like 'FCP190N60' may differ electrically from 'FCP190N60E'. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure the ordering code matches the exact pinout and electrical specifications required for your circuit design to avoid compatibility issues.

Selection Notes

Select this component for applications requiring robust performance in high-voltage environments. The TO-220 package suits designs needing reliable thermal management via heatsinks. Evaluate the trade-off between conduction losses indicated by RDS(on) and switching losses defined by gate charge to optimize overall system efficiency for your specific frequency and load requirements.

Part Context

This part belongs to onsemi's SuperFET family, designed for general-purpose power switching. It utilizes advanced planar trench technology to achieve superior figure-of-merit compared to standard MOSFETs. The component is engineered for industrial and consumer electronics where reliability and energy efficiency are critical operational parameters.

Replacement Considerations

Check for direct substitutes within the same SuperFET series, such as FCP16N60 or FCP20N60, ensuring voltage and current ratings align with circuit demands. Verify that any replacement maintains compatible pin configurations and thermal characteristics to ensure seamless integration without redesigning the PCB layout.