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Product Detailed Parameters
- Description：MOSFET N-CH 650V 17A TO220-3
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：144W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP190N65S3 is a single N-channel power MOSFET from the onsemi SuperFET III series, utilizing charge balance technology for high-voltage superjunction performance. It features a 650V drain-source breakdown voltage and a maximum continuous drain current of 20A at case temperature of 25°C. The device offers a typical on-resistance of 190mΩ at VGS=10V and a gate charge of 34nC. Packaged in a TO-220-3 through-hole configuration, it supports a junction temperature range from -55°C to +150°C with a power dissipation rating of 36W.
Feature Summary
- SuperFET III architecture with charge balance technology for low conduction and switching losses
- Optimized body diode reverse recovery characteristics suitable for hard-switching applications
- High dv/dt capability for robust operation in resonant converter topologies
Applications
- High-efficiency isolated DC/DC converters
- Half-bridge LLC resonant converter designs
- Industrial power supply systems
Procurement Notes
Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm RoHS compliance status via official datasheets before integration. Ensure thermal management design accommodates the specified power dissipation limits within the operating temperature range. Validate package pinout compatibility with existing PCB footprints during the procurement phase.
Selection Notes
Select this component for designs requiring high voltage isolation with efficient switching capabilities. The 190mΩ on-resistance balances conduction loss against gate drive requirements. Consider the TO-220-3 package for applications needing robust mechanical mounting and effective heat sinking. Evaluate system efficiency needs against the specific gate charge characteristics for optimal driver selection.
Part Context
This part belongs to the SuperFET III family, representing an evolution in silicon superjunction MOSFET technology. The series integrates optimized cell structures to minimize both RDS(on) and Qg. This specific model targets medium-power conversion stages where reliability and thermal performance are critical constraints for long-term system operation.
Replacement Considerations
The NTPF190N65S3HF is a documented alternative offering similar electrical specifications within the same manufacturer portfolio. Verify pinout compatibility and thermal resistance values when substituting to ensure circuit integrity without redesign.
