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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO220-3
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP20N60 is a single N-channel SuperFET power MOSFET manufactured by onsemi. It features a 600V drain-source voltage rating and a continuous drain current of 20A. The device utilizes TO-220 packaging for through-hole mounting. Key electrical characteristics include a maximum on-resistance of 190mΩ at Vgs=10V, a gate charge of 75nC, and a reverse recovery charge of 36nC. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- SuperFET technology integrates low Rds(on) with optimized gate charge for efficient switching.
- Soft body diode characteristic reduces switching losses and electromagnetic interference.
- High avalanche energy capability ensures robustness against inductive load transients.
Applications
- High-frequency AC/DC converters
- Power factor correction circuits
- Uninterruptible power supplies
Procurement Notes
Verify the specific ordering suffix to confirm package type and tape/reel specifications. Confirm RoHS compliance status as required by regional regulations. Check for lead-free manufacturing indicators on the datasheet. Ensure the component matches the intended thermal management requirements for the target application environment.
Selection Notes
Select this component when high voltage isolation and moderate current handling are required. The SuperFET architecture offers superior efficiency compared to standard planar MOSFETs. Consider the TO-220 package dimensions for PCB layout constraints. Evaluate thermal resistance values against the expected power dissipation levels in the final design.
Part Context
This part belongs to onsemi's SuperFET family, designed for hard-switching applications. It replaces older generation MOSFETs requiring lower conduction and switching losses. The device is suitable for industrial and consumer power supply designs needing reliable performance under high stress conditions.
Replacement Considerations
Direct substitutes may include FCA20N60 or similar SuperFET variants from the same manufacturer. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference datasheets for any differences in gate charge or avalanche ratings.
