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Product Detailed Parameters
- Description：MOSFET N-CH 600V TO220-3
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Download product information
Overview
The FCP21N60N is a single N-channel power MOSFET from onsemi, housed in a TO-220-3 through-hole package. It features a 600 V drain-source breakdown voltage and a continuous drain current of 21 A. The device exhibits a maximum on-resistance of 195 mΩ at 10 V gate drive. Key electrical characteristics include a gate charge of 74 nC, a threshold voltage range of 2 V to 4 V, and a power dissipation capacity of 180 W. Operating temperatures span from -55 °C to +150 °C junction temperature.
Feature Summary
- High-voltage capability with 600 V breakdown rating for robust operation in demanding environments
- Low on-state resistance optimized for efficient conduction and reduced thermal losses
- Enhanced switching performance characterized by low gate charge for improved drive efficiency
Applications
- High-frequency switch-mode power supplies
- DC-to-AC motor control circuits
- Power factor correction stages
Procurement Notes
Verify the specific datasheet revision and ordering suffixes when sourcing, as manufacturing updates may occur. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to finalizing procurement decisions. Ensure that the component meets all relevant regulatory standards required for your specific application region.
Selection Notes
Select this component based on its 600 V rating and 21 A current handling capabilities relative to system requirements. Evaluate the 195 mΩ on-resistance against thermal management constraints to ensure adequate heat sinking. Consider the TO-220-3 package for through-hole mounting compatibility and verify that the gate charge specifications align with the driving circuit's output capabilities.
Part Context
This part belongs to onsemi’s SupreMOS family of high-voltage N-channel MOSFETs. These devices are engineered for general-purpose power switching applications requiring high reliability and efficiency. The FCP21N60N utilizes advanced silicon planar technology to deliver superior performance compared to standard discrete solutions within the same voltage class.
Replacement Considerations
Direct substitutes include the FCP25N60N and FCP16N60N from the same manufacturer series. Verify pinout compatibility and ensure that the alternative device’s current and voltage ratings meet or exceed the original design specifications before implementation.
