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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, N
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：260mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The Fairchild Semiconductor FCP260N60E is a single N-channel enhancement mode power MOSFET belonging to the SuperFET II series. It features a 600V drain-source breakdown voltage and a maximum continuous drain current of 10.2A at case temperature. The device exhibits a typical on-resistance of 260 milliohms, with a gate charge of approximately 48 nanocoulombs. Designed for through-hole mounting in TO-220-3 packages, it supports junction temperatures up to 150°C and offers high efficiency in switching applications.
Feature Summary
- SuperFET II technology integrates optimized gate drive characteristics to reduce switching losses and electromagnetic interference noise.
- Enhanced thermal performance via direct copper bond substrate construction facilitates efficient heat dissipation from the silicon die.
- Low on-resistance minimizes conduction losses during steady-state operation, improving overall system efficiency.
Applications
- High-frequency switch-mode power supplies
- Synchronous rectification circuits
- DC-to-DC converter modules
Procurement Notes
Verify the specific manufacturer origin, as Fairchild's semiconductor division was acquired by ON Semiconductor. Confirm that the component markings and datasheet specifications align with the intended design requirements before integration. Ensure compliance with RoHS directives and check for any lifecycle status changes or obsolescence notices associated with this part number.
Selection Notes
Select this component when a 600V rating is required alongside moderate current handling capabilities around 10 amperes. The TO-220-3 package is suitable for designs prioritizing robust mechanical mounting and straightforward thermal management solutions. Evaluate the trade-off between the 260 milliohm resistance and the 48 nanocoulomb gate charge against alternative devices offering lower resistance but higher capacitive loads.
Part Context
This device belongs to the SuperFET II family, representing an evolution in planar MOSFET technology designed for improved switching performance compared to standard trench structures. It serves as a discrete solution within broader power conversion architectures, often replacing older generation components to achieve higher power density and reduced thermal footprints in industrial and consumer electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with equivalent models from the same manufacturer series or cross-reference with other vendors offering identical electrical parameters and pin configurations.
