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Product Detailed Parameters
- Description：MOSFET N-CH 800V 17A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：290mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3205 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：212W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP290N80 is an N-channel enhancement mode MOSFET from the SuperFET II series by onsemi. It features a maximum drain-source voltage of 800 V and a continuous drain current of 14 A at 25 °C. The device utilizes TO-220F packaging for through-hole mounting. Key electrical parameters include a maximum on-resistance of 0.29 Ω, a typical gate charge of 43 nC at 10 V, and a power dissipation rating of 35.7 W. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- SuperFET II technology integrates low RDS(on) with optimized gate charge characteristics.
- Enhanced avalanche energy capability supports robust operation under high-stress conditions.
- TO-220F package design facilitates efficient thermal management via direct mounting.
Applications
- High-voltage DC-DC converter circuits
- Industrial motor drive systems
- Uninterruptible power supply (UPS) topologies
Procurement Notes
Verify the specific suffix code against official datasheets to confirm exact pinout and thermal specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure the ordering quantity aligns with standard factory packaging configurations to avoid handling discrepancies.
Selection Notes
Select this component when designing circuits requiring high blocking voltage combined with moderate current handling capabilities. Evaluate the thermal resistance of the TO-220F package against your system's heat dissipation requirements. Compare the gate charge specifications against your driver capabilities to ensure optimal switching performance and minimize transition losses.
Part Context
This part belongs to onsemi's SuperFET II family, which combines trench gate and field plate technologies. These devices are engineered for high-efficiency power switching applications. The FCP290N80 specifically targets designs needing reliable performance in harsh industrial environments while maintaining low conduction losses.
Replacement Considerations
Direct substitutes may include other 800V N-channel MOSFETs in TO-220 packages with comparable RDS(on) and current ratings. Verify pin compatibility and thermal characteristics before substitution. Cross-reference with onsemi's internal replacement guides for validated alternatives.
