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Product Detailed Parameters
- Description：MOSFET N-CH 800V 14A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2350 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：195W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP400N80Z is an N-channel enhancement-mode MOSFET from the SuperFET II series by onsemi. It features a drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 14 A. The device has a maximum on-resistance (Rds(on)) of 0.4 Ω, typical gate charge (Qg) of 43 nC at specified Vgs, and power dissipation (Pd) of 35.7 W. It operates within a temperature range of -55°C to 150°C and uses a TO-220F through-hole package with 3 pins.
Feature Summary
- Integrated body diode for fast recovery performance
- Low gate charge for efficient switching
- High voltage capability for robust operation
Applications
- High-voltage power supplies
- Industrial motor control
- Uninterruptible power systems
Procurement Notes
Verify the exact part number against official onsemi documentation to ensure compatibility with SuperFET II specifications. Confirm package type and pinout alignment with design requirements. Check RoHS compliance status as indicated in the datasheet. Validate thermal management needs based on the 35.7 W power dissipation rating. Ensure sourcing channels provide genuine components with traceable manufacturing data.
Selection Notes
Select this component for applications requiring high voltage blocking and moderate current handling in through-hole designs. Consider the 0.4 Ω on-resistance for conduction loss calculations. Evaluate gate drive requirements against the 43 nC gate charge specification. Assess thermal performance within the -55°C to 150°C operating range. Compare against other SuperFET II variants for optimal cost-performance balance.
Part Context
This device belongs to onsemi's SuperFET II family, which integrates a MOSFET and a fast-recovery body diode in a single package. The series is designed for high-efficiency power conversion applications. The FCP400N80Z specifically targets medium-power scenarios where reliability and switching efficiency are critical. It complements other devices in the lineup offering different current and resistance ratings.
Replacement Considerations
Check for direct substitutes within the SuperFET II series with similar Rds(on) and Id ratings. Verify pin compatibility and thermal characteristics before substitution. Consult onsemi documentation for approved replacement parts.
