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Product Detailed Parameters
- Description：MOSFET N-CH 600V 7.4A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：89W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP600N60Z is a single N-channel enhancement mode MOSFET from the SuperFET II series, manufactured by onsemi. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source breakdown voltage of 650 V and supports a continuous drain current of 7.4 A. Its maximum on-resistance is 600 mOhms at 10 V gate drive. The component operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 89 W.
Feature Summary
- Integrated SuperFET II technology for optimized high-voltage performance
- Enhanced switching characteristics with low gate charge
- Robust thermal management capabilities in standard through-hole packaging
Applications
- High voltage power switching circuits
- Industrial motor control systems
- Power supply designs requiring efficient conduction
Procurement Notes
Verify component authenticity against official onsemi documentation due to potential market variations. Confirm RoHS compliance status via manufacturer declarations before integration. Check for end-of-life notices as availability may be restricted. Ensure sourcing channels provide valid traceability records for quality assurance purposes.
Selection Notes
Select this component for applications demanding reliable N-channel switching with moderate current handling. The TO-220-3 package facilitates manual assembly or standard PCB mounting. Evaluate thermal requirements against the 89 W dissipation limit. Consider the 600 mOhm on-resistance impact on overall system efficiency during continuous operation phases.
Part Context
This part belongs to the SuperFET II family, designed for improved switching performance compared to previous generations. It serves as a discrete solution for medium-power applications where through-hole reliability is preferred over surface mount alternatives. The device complements other onsemi power transistors in industrial and consumer electronics portfolios.
Replacement Considerations
Direct substitutes include FCPF600N60Z (same electrical specs, different package) and FCD600N60Z (surface mount equivalent). Verify pinout compatibility and thermal resistance differences when transitioning between packages.
