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Product Detailed Parameters
- Description：MOSFET N-CH 800V 8A TO220-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：850mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1315 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：136W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The FCP850N80Z is an N-channel enhancement mode MOSFET from onsemi's SuperFET II series, housed in a TO-220-3 through-hole package. It features an 800 V drain-source breakdown voltage and supports a continuous drain current of 8 A at case temperature. The device exhibits a maximum on-resistance of 850 mΩ at 10 V gate drive. Key electrical characteristics include a gate charge of 22 nC, a threshold voltage of 2.5 V, and a power dissipation rating of 136 W. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- SuperFET II technology integration for optimized switching performance
- High voltage capability with 800 V drain-source breakdown
- Low on-resistance design for efficient conduction
- Robust thermal handling with 136 W power dissipation rating
Applications
- High-voltage DC-DC converter circuits
- Industrial motor control systems
- Power supply switch-mode applications
Procurement Notes
Verify the specific ordering suffix and manufacturer part number against official onsemi documentation to ensure component authenticity. Confirm RoHS compliance status and material composition declarations via the manufacturer's sustainability resources before procurement. Cross-reference datasheet revisions to validate electrical parameters and package specifications match project requirements.
Selection Notes
Select this component for designs requiring high-voltage isolation and moderate current handling in through-hole configurations. Evaluate thermal management strategies to maintain junction temperature within the specified operating range during continuous operation. Compare gate charge and switching times against driver capabilities to optimize circuit efficiency and minimize switching losses in high-frequency applications.
Part Context
This device belongs to the SuperFET II family of silicon N-channel MOSFETs manufactured by onsemi. The series combines advanced cell architecture with fast switching characteristics. The TO-220-3 package provides mechanical stability and thermal conductivity suitable for board-mounted applications requiring robust electrical connections and heat dissipation paths.
Replacement Considerations
Official substitute part numbers are not explicitly confirmed in the provided source data. Verify compatibility with alternative components by matching critical parameters such as voltage rating, current capacity, on-resistance, and package dimensions against original design specifications.
