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Product Detailed Parameters
- Description：INTEGRATED CIRCUIT
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The FCPF11N65_G is an N-channel enhancement mode MOSFET from onsemi's SupreMOS series. It features a maximum drain-source voltage of 600 V and a continuous drain current of 10.8 A. The device utilizes a TO-220F package for through-hole mounting with three pins. Key electrical parameters include a maximum drain-source resistance of 299 mΩ, a gate threshold voltage minimum of 2 V, and a typical gate charge of 27.4 nC at 10 V. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- SupreMOS technology designed for high-efficiency power switching applications
- Robust reliability and scalable performance for mission-critical power systems
- Enhanced thermal management capabilities via TO-220F through-hole packaging
Applications
- Industrial motor drive systems
- DC fast EV charging infrastructure
- Solar power energy storage solutions
Procurement Notes
Verify the specific suffix against official documentation, as variations may exist. Confirm that the TO-220F package matches your PCB footprint requirements. Ensure the 600V rating aligns with your system's voltage headroom. Check datasheet specifications for thermal resistance values relevant to your heat sink design. Validate component authenticity through authorized distribution channels.
Selection Notes
Select this component when a 600V N-channel MOSFET is required for high-current applications up to 10.8 A. The low on-resistance supports efficient power conversion in industrial and automotive contexts. Consider the TO-220F package for ease of assembly and heatsinking in through-hole designs. Evaluate thermal performance constraints against the specified operating temperature range.
Part Context
This part belongs to onsemi's SupreMOS family, which focuses on intelligent power technologies. The series targets industrial automation, renewable energy, and electric vehicle charging markets. It represents silicon-based discrete semiconductors designed for robust performance in demanding power electronics environments.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacement.
