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Product Detailed Parameters
- Description：MOSFET N-CH 650V 24A TO220F
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：125mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 2.4mA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1790 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：38W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi FCPF125N65S3 is an N-channel SuperFET III MOSFET featuring a 650V drain-source voltage rating and a TO-220 package. It offers a maximum continuous drain current of 12A at 25°C and a typical on-resistance of 125mΩ. The device operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 39W. Key electrical parameters include a gate charge of 24nC and a forward voltage of 1.2V.
Feature Summary
- Utilizes SUPERFET III technology for low on-resistance and fast switching performance
- Designed for high dv/dt immunity and improved EMI characteristics
- Features robust avalanche energy capability for enhanced reliability
Applications
- Telecommunications and server power supplies
- Industrial power systems
- Uninterruptible Power Supply (UPS) units
- Solar energy conversion systems
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout and thermal specifications. Ensure the component matches the required voltage and current ratings for the target application. Confirm compliance with environmental standards such as RoHS before integration into final designs.
Selection Notes
Select this component for applications requiring high-voltage handling with moderate current capacity in through-hole configurations. Consider the thermal resistance and package size when designing heat dissipation solutions. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching efficiency.
Part Context
This part belongs to the SUPERFET III family from onsemi, which employs charge balance technology to achieve superior performance compared to traditional planar MOSFETs. The series is engineered for high-efficiency power conversion, offering reduced conduction and switching losses in demanding electronic environments.
Replacement Considerations
Direct substitutes within the same series include FCP099N65S3 and FCP190N65S3. Verify compatibility regarding on-resistance values and thermal characteristics when considering alternative parts from the same manufacturer.
