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Product Detailed Parameters
- Description：MOSFET N-CH 650V 14.9A TO220F
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：14.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.4mA
- Gate Charge (Qg) (Max) @ Vgs：94 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3737 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF150N65F is a single N-channel Power MOSFET from onsemi's SuperFET II family, designed for high-voltage switching applications. It features a 650V drain-source breakdown voltage and a maximum continuous drain current of 24A at 25°C. The device incorporates an optimized low on-resistance of 150mΩ to minimize conduction losses. Packaged in a TO-220FP-3 through-hole housing, it supports a power dissipation of 39W and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- SuperFET II technology integrates the gate driver with the power switch to reduce switching losses and simplify drive requirements.
- Optimized low on-resistance minimizes conduction losses for improved efficiency in hard-switching topologies.
- Enhanced avalanche ruggedness allows the device to withstand repetitive avalanche energy stresses.
Applications
- High-frequency AC/DC and DC/DC converters
- Power factor correction (PFC) circuits
- Motor control systems
Procurement Notes
Verify the specific suffix against official datasheets to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status as manufacturing processes evolve. Check for obsolescence notices or recommended new design alternatives before finalizing procurement plans.
Selection Notes
Select this component for designs requiring robust 650V blocking capability with moderate current handling. Evaluate thermal management strategies to ensure the 39W power dissipation rating remains within safe operating limits under worst-case ambient conditions.
Part Context
This part belongs to onsemi's SuperFET II series, which combines advanced trench MOSFET technology with integrated gate drive capabilities. This integration reduces total gate charge and switching times compared to discrete solutions, making it suitable for efficient power conversion.
Replacement Considerations
Consult official substitution guides for direct replacements. Verify pinout compatibility and electrical parameter margins when considering alternative manufacturers' parts.
