FCPF165N65S3L1-F154

$2.71

Description：SF3 650V 165MOHM E TO220F
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:93468c844645 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：SF3 650V 165MOHM E TO220F
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：19A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id：4.5V @ 410µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF165N65S3L1-F154

Overview

The onsemi FCPF165N65S3L1-F154 is an N-channel power MOSFET from the SUPERFET III Easy Drive series. It features a 650 V drain-source voltage rating and a maximum continuous drain current of 19 A at 25°C case temperature. The device utilizes super-junction charge balance technology to achieve a typical RDS(on) of 140 mΩ and ultra-low gate charge of 35 nC. Packaged in a TO-220F (CASE 340BF) through-hole housing, it supports a junction temperature range of -55°C to +150°C.

Feature Summary

Super-junction charge balance technology for low conduction loss and superior switching performance
Easy Drive design optimized to manage EMI issues and simplify implementation
High dv/dt capability with 100% avalanche testing

Applications

Computing and display power supplies
Telecom and server power supplies
Industrial power supplies
Lighting, chargers, and adapters

Procurement Notes

Verify the specific ordering suffix L1 against official documentation to confirm packing method and tube quantity. Ensure thermal management aligns with the specified junction-to-case resistance. Confirm RoHS compliance status for the target region before finalizing procurement specifications.

Selection Notes

Select this component for high-voltage applications requiring low gate charge to reduce driver losses. The TO-220F package facilitates through-hole mounting for robust mechanical connections. Evaluate thermal derating curves to ensure safe operation within the 150°C junction limit under expected load conditions.

Part Context

This part belongs to the SUPERFET III family, representing onsemi's high-voltage super-junction MOSFET line. It succeeds earlier generations by offering improved efficiency through reduced on-resistance and gate charge metrics while maintaining ruggedness for demanding power conversion environments.