FCPF165N65S3R0L

$1.41

Description：MOSFET N-CH 650V 19A TO220F-3
Series：SuperFET® III
Mfr：onsemi
Package：Bulk,Tube

SKU:e2af1a807c79 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 19A TO220F-3
Series：SuperFET® III
Mfr：onsemi
Package：Bulk,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id：4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF165N65S3R0L

Overview

The FCPF165N65S3R0L is a single N-channel enhancement mode MOSFET from the SuperFET III series, manufactured by onsemi. It features a TO-220F package with through-hole mounting. Key electrical parameters include a drain-source voltage (Vds) of 650 V and a continuous drain current (Id) of 19 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 165 mΩ and a gate charge (Qg) of 35 nC. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 35 W.

Feature Summary

Utilizes SuperFET III charge balance technology for low on-resistance and fast switching performance.
Designed for high dv/dt tolerance and improved electromagnetic interference (EMI) characteristics.
Features an isolated tab in the TO-220F package for efficient thermal management.

Applications

Telecommunications and server power supplies
Industrial power systems
Uninterruptible Power Supply (UPS) units
Solar energy conversion systems

Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm that the specific suffix 'L' corresponds to the intended packaging or variant requirements. Check for end-of-life status or obsolescence notices from the manufacturer. Ensure thermal design accounts for the specified power dissipation limits under actual operating conditions.

Selection Notes

Select this component for applications requiring high voltage blocking capability combined with moderate current handling. The low gate charge facilitates easier driver design and reduces switching losses. Compare Rds(on) values against alternative packages to determine optimal thermal resistance for the specific PCB layout constraints.

Part Context

This part belongs to the SuperFET III family, which employs advanced superjunction technology. It serves as a high-performance replacement for older generation MOSFETs in similar voltage classes. The TO-220F form factor provides a balance between current capacity and board space efficiency for general-purpose power electronics.