FCPF190N60-F154

$1.50

Description：MOSFET N-CH 600V 20.2A TO220F-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube,Tube

SKU:dd8de8989ecf Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 20.2A TO220F-3
Series：SuperFET® II
Mfr：onsemi
Package：Tube,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：20.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2950 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：39W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF190N60-F154

Overview

The FCPF190N60-F154 is an N-Channel enhancement-mode MOSFET from the SUPERFET II family, utilizing charge balance super-junction technology. It features a 600 V drain-source voltage rating and a maximum continuous drain current of 20.2 A at 25°C case temperature. The device exhibits a typical on-resistance of 170 mΩ and a total gate charge of 57 nC. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220F Ultra Narrow Lead package.

Feature Summary

Super-junction charge balance technology for low conduction loss
High avalanche energy capability with 100% testing
Low effective output capacitance for superior switching performance
Extreme dv/dt rate withstand capability

Applications

Computing and display power supplies
Telecom and server power supplies
Industrial power supplies
Lighting, chargers, and adapters

Procurement Notes

Verify the specific ordering suffix '-F154' against official documentation to confirm the exact shipping configuration and marking details. Ensure that the required thermal management design accommodates the specified junction-to-case thermal resistance values under actual operating conditions.

Selection Notes

Select this component when high-voltage isolation and efficient switching are required. The low gate charge supports reduced driver complexity, while the robust avalanche rating provides resilience against inductive load transients. Evaluate thermal derating curves to ensure safe operation across the full temperature range.

Part Context

This part belongs to the SUPERFET II series, designed to minimize system size and improve efficiency in power conversion applications. The integration of super-junction architecture allows for higher performance compared to traditional planar technologies within the same voltage class.