FCPF190N60

Overview

The onsemi FCPF190N60 is an N-channel enhancement mode MOSFET belonging to the SuperFET series. It features a maximum drain-source voltage of 600 V and a continuous drain current of 20 A. The device utilizes a TO-220 package for through-hole mounting with three pins. Key electrical parameters include a maximum drain-source resistance of 199 mΩ, a typical gate charge of 57 nC at 10 V, and a maximum power dissipation of 208 W. The component operates within a temperature range from -55 °C to +150 °C.

Feature Summary

• Integrated SuperFET technology designed for high-efficiency switching applications
• Enhanced low on-resistance characteristics for reduced conduction losses
• Robust thermal performance suitable for high-power density designs

Applications

• High-frequency switch-mode power supplies
• Industrial motor control systems
• DC-DC converter circuits

Procurement Notes

Verify the specific suffix designation against official datasheets to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status and material composition declarations prior to integration. Ensure the procurement channel provides valid traceability documentation for quality assurance purposes.

Selection Notes

Select this component when a 600 V rating and 20 A current capacity are required in a standard through-hole package. Evaluate the 199 mΩ on-resistance against thermal management constraints to ensure operation remains within the specified junction temperature limits during peak load conditions.

Part Context

This part belongs to the SuperFET family of discrete power semiconductors manufactured by onsemi. These devices are engineered to optimize the trade-off between switching speed and conduction loss. The TO-220 form factor facilitates straightforward integration into traditional printed circuit board layouts requiring robust mechanical anchoring.

Replacement Considerations

FCPF190N60-F152