ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 20.6A TO220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3175 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
Download product information
Overview
The FCPF190N60E is an N-channel enhancement-mode MOSFET from the SuperFET II series. It features a 650V drain-source voltage and a continuous drain current of 20.6A. The device has a maximum on-resistance of 190mΩ at Vgs=10V. Typical gate charge is 82nC at Vgs=10V. Power dissipation is rated at 39W in a TO-220-3 package. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- SuperFET II technology for optimized switching performance
- Low on-resistance for reduced conduction losses
- High voltage capability suitable for power conversion
Applications
- DC-DC converters
- Power factor correction circuits
- Industrial motor drives
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official Material Composition Declarations. Ensure storage conditions meet specified limits to prevent moisture sensitivity issues prior to soldering.
Selection Notes
Select based on required voltage rating and thermal management capabilities. Compare gate charge values against driver specifications to ensure efficient switching. Verify package compatibility with existing PCB layouts and heatsinking requirements for the target application environment.
Part Context
This component belongs to onsemi's SuperFET II family, designed for high-efficiency power switching applications. It utilizes advanced planar trench technology to achieve low Rds(on) while maintaining robust avalanche ruggedness. The TO-220-3 package facilitates through-hole mounting for industrial and commercial power supplies.
Replacement Considerations
Direct substitutes include FDPF190N60E and FDPF190N60. Verify pinout compatibility and electrical parameters such as Rds(on) and Qg before implementation.
