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Product Detailed Parameters
- Description：MOSFET N-CH 800V 2.6A TO220F
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.25Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：585 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：21.9W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF2250N80Z is an N-Channel SuperFET II MOSFET manufactured by Fairchild Semiconductor, now part of onsemi. It features a breakdown voltage (Vds) of 800 V and a continuous drain current (Id) of 2.6 A at case temperature. The device utilizes super-junction technology for low on-resistance and fast switching. It is housed in a TO-220F-3 through-hole package with a power dissipation rating of 21.9 W at case temperature.
Feature Summary
- SuperFET II super-junction technology for optimized performance
- High voltage capability suitable for hard-switching applications
- Through-hole mounting for robust mechanical connection
Applications
- AC-DC power supplies
- LED lighting drivers
- Industrial power conversion
Procurement Notes
Verify the manufacturer designation as Fairchild Semiconductor or onsemi, noting that Fairchild products are integrated into onsemi's portfolio. Confirm the specific suffix 'Z' indicates RoHS compliance and halogen-free status. Ensure the package type matches the required TO-220F-3 footprint for your PCB design. Check for any updated part numbers if replacing legacy inventory.
Selection Notes
Select this component for applications requiring high-voltage isolation and moderate current handling in through-hole designs. The 800 V rating provides safety margin for mains-connected circuits. Consider the thermal resistance of the TO-220F-3 package for heat dissipation requirements. Compare Rds(on) and gate charge specifications against alternative SuperFET II variants to balance conduction and switching losses for your specific frequency and load conditions.
Part Context
This device belongs to the SuperFET II family, which employs charge balance technology to achieve low on-resistance and fast switching speeds. The series includes various current ratings within the same voltage class, allowing designers to scale performance while maintaining compatible pinouts and packaging standards across different power levels.
Replacement Considerations
Check for equivalent parts within the FCPxxN80Z series from onsemi/Fairchild. Verify that substitute components maintain the same TO-220F-3 package and electrical characteristics, particularly Vds and Id ratings.
