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Product Detailed Parameters
- Description：MOSFET N-CH 600V 15A TO220F
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：260mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF260N60E-F152 is an N-channel enhancement mode MOSFET from the SuperFET II series by onsemi. It features a 600V drain-source breakdown voltage and a maximum continuous drain current of 15A. The device exhibits a typical on-resistance of 260mΩ at room temperature. Gate specifications include a threshold voltage of 3.5V and a total gate charge of 48nC. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 36W in a TO-220FP-3 package.
Feature Summary
- SuperFET II technology integrates body diode for improved switching performance
- Enhanced avalanche energy capability for robust operation
- Low thermal resistance for efficient heat dissipation
Applications
- High-frequency switch-mode power supplies
- DC-DC converter circuits
- Motor control applications
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revisions match specific lot codes. Check RoHS compliance documentation for environmental standards. Validate package markings against official manufacturer specifications. Ensure storage conditions prevent moisture damage prior to soldering.
Selection Notes
Evaluate thermal management requirements based on 36W dissipation limit. Compare gate charge values against driver capabilities for optimal switching speed. Assess circuit voltage spikes against the 600V breakdown rating. Consider package mounting constraints for the TO-220FP-3 form factor.
Part Context
This component belongs to onsemi's SuperFET II family, designed for high-efficiency power conversion. It utilizes advanced trench gate and field plate technology to minimize conduction losses while maintaining fast switching characteristics suitable for modern power electronics designs.
Replacement Considerations
Direct substitutes may include FCPF190N60E or FCP190N60E with adjusted current ratings. Verify pinout compatibility and thermal characteristics before substitution.
