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Product Detailed Parameters
- Description：MOSFET N-CH 650V 15A TO220F
- Series：FRFET®, SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：260mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2340 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The Fairchild Semiconductor FCPF260N65FL1 is a SuperFET II N-channel power MOSFET designed for high-efficiency power conversion. It features a 650V drain-source voltage rating and a typical on-resistance of 260mΩ at 25°C. The device utilizes trench gate and field plate technology to minimize switching losses and conduction losses. It is housed in a TO-220FP-3 package, providing robust thermal performance and mechanical stability for through-hole mounting applications.
Feature Summary
- SuperFET II technology integrates the MOSFET with an integrated body diode optimized for fast recovery characteristics.
- Trench gate architecture reduces gate charge and switching energy compared to conventional planar technologies.
- Enhanced avalanche ruggedness supports reliable operation under transient overload conditions.
Applications
- High-frequency AC-DC and DC-DC power supply topologies
- Power factor correction (PFC) circuits
- Motor control drives and inverters
Procurement Notes
Verify the specific suffix FL1 against the manufacturer's current datasheet to confirm pinout compatibility and lead plating specifications. Ensure the procurement source provides original manufacturer documentation to validate the component's authenticity and traceability before integration into production designs.
Selection Notes
Select this component when designing systems requiring low conduction losses combined with fast switching speeds in a through-hole package. Evaluate the thermal resistance capabilities relative to the expected load current and ambient temperature constraints to ensure junction temperatures remain within safe operating limits during continuous operation.
Part Context
This part belongs to the SuperFET II family from Fairchild Semiconductor, now part of ON Semiconductor. This series represents an evolution in silicon carbide-compatible silicon technology, offering superior efficiency metrics over standard planar MOSFETs while maintaining cost-effectiveness for industrial and consumer power electronics markets.
Replacement Considerations
Cross-reference with other SuperFET II devices or equivalent 650V/260mΩ TO-220FP-3 MOSFETs from ON Semiconductor or other manufacturers. Verify that substitute parts match the critical parameters of Vds, Rds(on), and package dimensions to maintain board layout compatibility.
