FCPF36N60NT

FCPF36N60NT

  • Description:MOSFET N-CH 600V 36A TO220F
  • Series:SupreMOS™
  • Mfr:onsemi
  • Package:Tube

SKU:fead4382967d Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 600V 36A TO220F
  • Series:SupreMOS™
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:90mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:112 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:4785 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3
  • Package / Case:TO-220-3 Full Pack

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FCPF36N60NT

Overview

The FCPF36N60NT is a single N-channel enhancement mode MOSFET from the SupreMOS series, manufactured by Fairchild Semiconductor. It features a TO-220F-3 through-hole package and operates with a drain-source voltage of 600 V and a continuous drain current of 36 A at case temperature. The device exhibits a maximum on-resistance of 90 mΩ at 10 V gate drive and a typical gate charge of 112 nC. It supports a junction temperature range from -55°C to +150°C.

Feature Summary

  • Utilizes SupreMOS technology for optimized power performance in high-voltage applications.
  • Designed for through-hole mounting using the TO-220F-3 package format.
  • Features an N-channel enhancement mode configuration for standard switching control.

Applications

  • High-voltage power switching circuits
  • Industrial motor control systems
  • Power supply output stages

Procurement Notes

Verify component authenticity due to discontinued status. Confirm manufacturer origin as Fairchild Semiconductor prior to integration. Check RoHS compliance documentation for specific material declarations. Ensure storage conditions maintain integrity given potential age-related degradation risks associated with obsolete inventory sources.

Selection Notes

Select this component when a 600V N-channel MOSFET with 36A current capability is required in a TO-220F-3 package. Compare on-resistance and gate charge specifications against alternative SupreMOS devices if lower switching losses are needed. Verify thermal management requirements align with the 36A continuous current rating at case temperature.

Part Context

This part belongs to the SupreMOS family of high-voltage MOSFETs originally developed by Fairchild Semiconductor. The series targets efficient power conversion and switching applications requiring robust voltage handling. Distribution channels may list it under onsemi branding following corporate acquisitions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Evaluate other SupreMOS variants with similar electrical parameters for functional compatibility.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage is ±30 V.

Is this component suitable for high-temperature environments?

Yes, the device supports a maximum junction temperature of +150°C.

FCPF36N60NTFCPF36N60NT

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