SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FCPF36N60NT is a single N-channel enhancement mode MOSFET from the SupreMOS series, manufactured by Fairchild Semiconductor. It features a TO-220F-3 through-hole package and operates with a drain-source voltage of 600 V and a continuous drain current of 36 A at case temperature. The device exhibits a maximum on-resistance of 90 mΩ at 10 V gate drive and a typical gate charge of 112 nC. It supports a junction temperature range from -55°C to +150°C.
Verify component authenticity due to discontinued status. Confirm manufacturer origin as Fairchild Semiconductor prior to integration. Check RoHS compliance documentation for specific material declarations. Ensure storage conditions maintain integrity given potential age-related degradation risks associated with obsolete inventory sources.
Select this component when a 600V N-channel MOSFET with 36A current capability is required in a TO-220F-3 package. Compare on-resistance and gate charge specifications against alternative SupreMOS devices if lower switching losses are needed. Verify thermal management requirements align with the 36A continuous current rating at case temperature.
This part belongs to the SupreMOS family of high-voltage MOSFETs originally developed by Fairchild Semiconductor. The series targets efficient power conversion and switching applications requiring robust voltage handling. Distribution channels may list it under onsemi branding following corporate acquisitions.
Publicly confirmed substitute part numbers are not available in the provided source data. Evaluate other SupreMOS variants with similar electrical parameters for functional compatibility.
The maximum gate-source voltage is ±30 V.
Yes, the device supports a maximum junction temperature of +150°C.