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Product Detailed Parameters
- Description：MOSFET N-CH 800V 8A TO220F
- Series：*
- Mfr：Fairchild/ON Semiconductor
- Package：Tube
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The FCPF650N80Z is an N-channel power MOSFET from the SuperFET II series, manufactured by onsemi. It features a drain-source voltage of 800 V and a continuous drain current of 10 A at 25°C. The device exhibits a typical on-resistance of 530 mΩ and a gate charge of 27 nC. It operates within a temperature range of -55°C to +150°C junction temperature. The component utilizes a TO-220-3 through-hole package and includes an internal gate-source ESD diode capable of withstanding over 2 kV HBM stress.
Feature Summary
- SuperFET II technology delivers low on-resistance and ultra-low gate charge for enhanced efficiency.
- Internal gate-source ESD diode provides improved electrostatic discharge protection exceeding 2 kV HBM.
- 100% avalanche tested to ensure reliability under inductive switching conditions.
Applications
- AC-DC power supplies
- LED lighting drivers
- Notebook adapters
- ATX power supplies
- Industrial power applications
Procurement Notes
Verify the specific part number suffix against official documentation, as naming conventions may have transitioned from Fairchild to onsemi. Confirm RoHS compliance status and check for any product change notices regarding pinout or electrical specifications before finalizing procurement plans.
Selection Notes
Select this component for high-voltage applications requiring efficient switching performance. The low gate charge reduces drive requirements, while the robust avalanche rating supports inductive loads. Ensure thermal management aligns with the specified power dissipation limits in the target enclosure environment.
Part Context
This device belongs to the SuperFET II family, representing onsemi's advanced planar trench technology. Originally developed by Fairchild Semiconductor, these components are designed for high-efficiency power conversion. The FCPF650N80Z specifically targets applications demanding high breakdown voltage with minimized conduction losses.
Replacement Considerations
Check for updated part numbers on the onsemi website, as legacy Fairchild identifiers may require modification. Verify that any substitute maintains the 800V rating and compatible TO-220-3 footprint for direct board replacement.
