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Product Detailed Parameters
- Description：MOSFET N-CH 600V 7A TO220F
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF7N60 is a single N-channel silicon power MOSFET from the SuperFET family, manufactured by onsemi. It features a TO-220-3 through-hole package and operates with a drain-source voltage of 600 V and a continuous drain current of 7 A at 25°C. The device exhibits a maximum on-resistance of 530 mΩ at a gate-source voltage of 10 V. Key switching parameters include a gate charge of 30 nC, a typical turn-on delay of 35 ns, and a fall time of 32 ns. It supports a junction temperature range from -55°C to +150°C with a power dissipation rating of 83 W.
Feature Summary
- SuperFET technology for enhanced efficiency
- High voltage capability up to 600 V
- Through-hole mounting for robust connections
Applications
- General-purpose power switching
- DC-DC converter circuits
- Motor control applications
Procurement Notes
Verify the exact part number spelling against official manufacturer documentation, as standard listings typically reference FCP7N60. Confirm RoHS compliance status and specific suffix codes if available in datasheets. Ensure the supplier provides valid traceability documents matching the onsemi manufacturing origin before finalizing procurement orders.
Selection Notes
Select this component for designs requiring high-voltage isolation with moderate current handling capabilities. The TO-220-3 package facilitates effective thermal management via heatsinking. Evaluate the 530 mΩ on-resistance against system conduction loss requirements and ensure the 600 V breakdown voltage exceeds peak circuit voltages with adequate safety margins.
Part Context
This device belongs to the FCP series of high-voltage N-channel MOSFETs produced by onsemi. These components utilize advanced trench gate technology to optimize the trade-off between conduction losses and switching performance. The series is designed for general-purpose power electronics applications requiring reliable operation under high electrical stress conditions.
Replacement Considerations
Cross-reference with FCP7N60 or FCP7N60N for identical specifications. Verify pinout compatibility and thermal characteristics when substituting with other 600V 7A TO-220 devices.
