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Product Detailed Parameters
- Description：MOSFET N-CH 800V 6A TO220F
- Series：*
- Mfr：Fairchild/ON Semiconductor
- Package：Tube
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
FCPF850N80Z is an N-Channel SuperFET II MOSFET manufactured by onsemi. It features a drain-source voltage of 800 V and a continuous drain current of 6 A at 25°C. The device has a maximum on-resistance of 850 mΩ at 10 V gate drive. It operates within a temperature range of -55°C to +150°C junction temperature. The component utilizes a DPAK-3 (TO-252-3) surface-mount package. Key electrical characteristics include a gate charge of 22 nC and a threshold voltage of 2.5 V.
Feature Summary
- Integrates SuperFET II technology for optimized switching performance
- Provides enhanced avalanche ruggedness with 100% avalanche testing
- Features improved electrostatic discharge protection exceeding 2 kV HBM
Applications
- AC-DC power supplies
- LED lighting drivers
- Notebook adapters
- Industrial power applications
Procurement Notes
Verify the exact part number against official onsemi documentation, as Fairchild Semiconductor product identifiers may have been updated following the company merger. Confirm that the suffix 'Z' indicates RoHS compliance and halogen-free status according to the manufacturer's current labeling standards. Ensure the datasheet version matches the specific manufacturing batch requirements for your design.
Selection Notes
Select this component for high-voltage applications requiring low conduction losses in a compact surface-mount footprint. The SuperFET II architecture offers reduced gate charge compared to standard MOSFETs, facilitating faster switching speeds. Consider the thermal dissipation capabilities of the TO-252-3 package when designing the PCB layout for adequate heat management under continuous load conditions.
Part Context
This device belongs to the SuperFET II family, which combines advanced trench MOSFET technology with integrated gate drive control. Originally developed by Fairchild Semiconductor, these products are now managed by onsemi. The FCPF850N80Z represents a transition from through-hole to surface-mount packaging while maintaining the high-voltage performance characteristics typical of the 800V class.
Replacement Considerations
The FCD850N80Z serves as a direct pin-compatible replacement within the same series, offering identical electrical specifications but housed in a DPAK-3 package instead of the TO-252-3 variant.
